? semiconductor components industries, llc, 2016 july, 2016 ? rev. 13 1 publication order number: mjd41c/d mjd41c(npn), mjd42c(pnp) complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (?1? suffix) ? electrically similar to popular tip41 and tip42 series ? epoxy meets ul 94 v?0 @ 0.125 in ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant maximum ratings rating symbol max unit collector?emitter voltage v ceo 100 vdc collector?base voltage v cb 100 vdc emitter?base voltage v eb 5 vdc collector current ? continuous i c 6 adc collector current ? peak i cm 10 adc base current i b 2 adc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation (note 1) @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ?65 to +150 c esd ? human body model hbm 3b v esd ? machine model mm c v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 6 amperes 100 volts, 20 watts ipak case 369d style 1 dpak case 369c style 1 marking diagrams a = assembly location y = year ww = work week j4xc = device code x = 1 or 2 g = pb?free package ayww j4xcg see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information ayww j4xcg www. onsemi.com dpak ipak complementary 1 base 3 emitter collector 2, 4 1 base 3 emitter collector 2, 4 1 2 3 4 1 2 3 4
mjd41c (npn), mjd42c (pnp) www. onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 6.25 c/w thermal resistance, junction?to?ambient (note 2) r ja 71.4 c/w 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 3) (i c = 30 madc, i b = 0) v ceo(sus) 100 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ceo ? 50 adc collector cutoff current (v ce = 100 vdc, v eb = 0) i ces ? 10 adc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 0.5 madc on characteristics (note 3) dc current gain (i c = 0.3 adc, v ce = 4 vdc) (i c = 3 adc, v ce = 4 vdc) h fe 30 15 ? 75 ? collector?emitter saturation voltage (i c = 6 adc, i b = 600 madc) v ce(sat) ? 1.5 vdc base?emitter on voltage (i c = 6 adc, v ce = 4 vdc) v be(on) ? 2 vdc dynamic characteristics current gain ? bandwidth product (note 4) (i c = 500 madc, v ce = 10 vdc, f test = 1 mhz) f t 3 ? mhz small?signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1 khz) h fe 20 ? ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. f t = ? h fe ?? f test .
mjd41c (npn), mjd42c (pnp) www. onsemi.com 3 typical characteristics 0.06 i c , collector current (amp) 0.2 0.4 4 20 7 500 h fe , dc current gain v ce = 2 v t j = 150 c 70 0.3 1 25 c -55 c 10 0.1 0.6 2 6 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 15 10 t c 5 20 p d , power dissipation (watts) figure 2. switching time test circuit 2 i c , collector current (amp) t j = 25 c v cc = 30 v i c /i b = 10 t, time (s) 1 0.7 0.5 0.3 0.2 t r 0.1 0.07 0.05 0.03 t d @ v be(off) 5 v figure 3. dc current gain 2.5 0 1.5 1 t a 0.5 2 300 200 100 50 30 5 0.02 0.06 0.2 0.4 4 1 0.1 0.6 2 6 figure 4. turn?on time +11 v 25 s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: msb5300 used above i b 100 ma msd6100 used below i b 100 ma reverse all polarities for pnp. t c t a surface mount figure 5. base emitter voltage vs. collector current figure 6. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v be(on) , base?emitter voltage (v) v be(sat) , base?emitter saturation voltage (v) v ce = 4 v t a = 150 c 80 c 25 c ?40 c ?55 c i c /i b = 10 t a = 150 c 80 c 25 c ?40 c ?55 c
mjd41c (npn), mjd42c (pnp) www. onsemi.com 4 typical characteristics 6 i c , collector current (amp) 0.1 t, time (s) 5 3 2 1 0.7 0.5 0.3 0.2 0.06 0.2 0.4 4 1 0.1 0.6 2 figure 7. collector emitter saturation voltage vs. collector current figure 8. turn?off time 0.07 0.05 i c , collector current (a) 10 1 0.1 0.01 0 0.1 0.2 0.3 0.6 0.7 0.9 v ce(sat) , base?emitter saturation voltage (v) 0.4 0.5 0.8 1.0 i c /i b = 10 t a = 150 c 80 c 25 c ?40 c and ?55 c t s t f t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 c, capacitance (pf) v ce , collector-emitter voltage (volts) t, time (ms) 0.01 0.01 0.05 1 2 5 10 20 50 100 200 500 0.1 0.5 0.2 100 0 0.03 0.3 3 30 300 0.02 2.5 a figure 9. collector saturation region i b , base current (ma) 1.2 0.4 0 10 2 0.8 t j = 25 c 1.6 i c = 1 a figure 10. capacitance v r , reverse voltage (volts) c ob 0.5 50 2 5 20 50 1 0.2 0.1 0.05 r(t), effective transient thermal r jc(t) = r(t) r jc r jc = 6.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) figure 11. thermal response 0.5 d = 0.5 5 a 1000 500 300 200 100 50 30 20 300 30 70 100 200 1 3 10 30 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 t j = 25 c c ib
mjd41c (npn), mjd42c (pnp) www. onsemi.com 5 i c , collector current (amp) 10 70 v ce , collector-emitter voltage (volts) 0.01 10 0 1 0.3 3 0.1 0.03 wire bond limit thermal limit second breakdown limit figure 12. maximum forward bias safe operating area t c = 25 c single pulse t j = 150 c dc 0.5 2 5 1ms mjd41c, 42c 50 30 20 10 7 5 3 2 1 0.05 100 s curves apply below rated v ceo 5ms 500 s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 12 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 11. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. ordering information device package type package shipping ? mjd41crlg dpak (pb?free) 369c 1,800 / tape & reel mjd41ct4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd41ct4g* dpak (pb?free) 369c 2,500 / tape & reel mjd42cg dpak (pb?free) 369c 75 units / rail mjd42c1g ipak (pb?free) 369d 75 units / rail mjd42crlg dpak (pb?free) 369c 1,800 / tape & reel NJVMJD42CRLG* dpak (pb?free) 369c 1,800 / tape & reel mjd42ct4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd42ct4g* dpak (pb?free) 369c 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable
mjd41c (npn), mjd42c (pnp) www. onsemi.com 6 package dimensions dpak (single gauge) case 369c issue d style 1: pin 1. base 2. collector 3. emitter 4. collector b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw
mjd41c (npn), mjd42c (pnp) www. onsemi.com 7 package dimensions 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjd41c/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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